Device?to?Materials Pathway for Electron Traps Detection in Amorphous GeSe?Based Selectors

The choice of the ideal material employed in selector devices is a tough task both from theoretical and experimental side, especially due to lack synergistic approach between techniques able correlate specific properties with device characteristics. Using material-to-device multiscale technique, reliable protocol for an efficient characterization active traps amorphous GeSe chalcogenide proposed. resulting trap maps trace back features materials responsible measured findings, connect them atomistic description sample. metrological can be straightforwardly extended other devices, which very beneficial material-device codesign optimization novel technologies.